| 摘要 |
PROBLEM TO BE SOLVED: To form an oxidation-resistant nitride film containing oxygen at a specific concentration or lower on a semiconductor substrate by providing a means, which connects an etching chamber for removing natural oxide films formed on the substrate to a rapid thermal nitriding chamber, in which thermal nitride films are formed on the substrates in a high vacuum or inert gas atmosphere. SOLUTION: A semiconductor manufacturing device is provided with a cassette loader 101, which sets a substrate cassette 100 and a transportation chamber 103 connected to the loader 101 and provided with a transporting arm 102 and connects to a vapor phase etching chamber 104 by the use of a hydrogen fluoride and a quick thermal nitriding chamber 105 to the transportation chamber 103. In addition, a vacuum pipe and a vacuum pump are installed to each of the transportation chamber 103, a vapor phase etching chamber 104, and a rapid thermal nitriding chamber 105. Thereafter, the excessive formation of oxide film on the surfaces of semiconductor substrates can be prevented in the succeeding oxidizing process, by forming highly oxidation- resistant nitride films containing oxygen at a concentration of <=40 ppm on the surface of the substrate. |
