发明名称 NITRIDE SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To improve insulating properties between positive and negative electrodes, and to protect surfaces of the electrodes and a semiconductor layer effectively, by forming an adhesion reinforcing layer consisting of a metal or a metallic oxide and used for increasing adhesive strength among the positive and the negative electrodes and an insulating protective film. SOLUTION: An insulating film 17 is formed so as to cover each electrode and each semiconductor layer excepting opening sections 21, 22 on a negative electrode 14 and an extracting electrode 16. The insulating film 17 is formed by using Si3 N4 or SiO2 , and the insulating protective film 17 is shaped on the negative electrode 14, the positive electrode 15 and the extracting electrode 16 through an adhesion reinforcing layer 1 composed of either metal in W, Ti, Cr, Ni, Cu and Al or its oxide at that time. Accordingly, sufficient adhesive strength among the negative electrode 14, the positive electrode 15 and the extracting electrode 16 containing Au as a principal ingredient and insulating protective film 17 can be ensured, and excellent insulating properties between the positive and the negative electrodes and the semiconductor layers and each electrode surface can be protected effectively.
申请公布号 JPH11150301(A) 申请公布日期 1999.06.02
申请号 JP19970331035 申请日期 1997.11.14
申请人 NICHIA CHEM IND LTD 发明人 TOYODA TATSUNORI;WAKAGI TAKAKATSU
分类号 H01L33/32;H01L33/40;H01L33/44;H01S5/00;H01S5/028;H01S5/323 主分类号 H01L33/32
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