发明名称 Semiconductor circuit in which distortion caused by changes in ambient temperature is compensated
摘要 <p>A semiconductor circuit includes an amplifying circuit and compensates the distortion characteristic in the event of changes in the ambient temperature. If the amplifying circuit is a field effect transistor (FET) amplifying circuit having a grounded source, a compensating circuit in which a thermistor having a negative temperature characteristic and a thermistor having a positive temperature characteristic are connected in a series is provided between the grounding point and the source of the FET to compensate distortion of signals outputted from the FET that is caused by the ambient temperature. The temperature at which distortion is considered a minimum is taken as the reference temperature, and the drain current that flows at this reference temperature is made a minimum such that the drain current increases as the ambient temperature deviates from the reference temperature, thereby suppressing or preventing increase in distortion in the event of changes in the ambient temperature. &lt;IMAGE&gt;</p>
申请公布号 EP0920123(A2) 申请公布日期 1999.06.02
申请号 EP19980122434 申请日期 1998.11.26
申请人 NEC CORPORATION 发明人 KAKUTA, YUJI;FUKASAWA, YOSHIAKI;TAGUCHI, YUICHI
分类号 H03F1/30;H03F1/32;(IPC1-7):H03F1/30 主分类号 H03F1/30
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