| 摘要 |
PROBLEM TO BE SOLVED: To provide a electron beam drawing device and its method, in which a beam size can be corrected with high accuracy even in an extra fine rage below 1.0μm, and the occurrence of a size difference between patterns due to dependence in a longitudinal direction is also dissolved. SOLUTION: A longitudinal width and a lateral width of a beam size is changed one-dimensionally respectively by a beam size control means 102, based on a reference size (absolute size) regulated by a reference size regulating means 101. The beam size is changed two-dimensionally (a pseudo change) by a combination of these one-dimensional changes. Amount of current is measured according to the two-dimensional change of the beam size by a current measuring means 103, and the measured value is estimated by the amount of current. An amount of slippage of the measured vale from a set value is computed for every set value by a slippage computing means 104, and an optimum value for a constant in a beam size correction formula is calculated by an optimum constant value computing means 105, so that the amount of slippage for every set value is minimized or it matches to a pattern size transferred to a specimen. This optimum value is feedback to the beam size correction formula.
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