发明名称 GATE DRIVE CIRCUIT FOR VOLTAGE DRIVE ELEMENT
摘要 PROBLEM TO BE SOLVED: To obtain a gate drive circuit which reduces a loss generated at a time when a short-circuit current is cut off. SOLUTION: When a circuit detects that a short-circuit current Ic flows to a voltage drive element such as an insulated-gate bipolar transistor(IGBT) or the like, a transistor TR4 which is shown in (a) is turned on. Thereby, as shown in (b), the gate-emitter voltage VGE of the IGBT is lowered down to the Zener voltage of a Zener diode ZD10. As a result, the short-circuit current Ic is reduced, and the burden of the IGBT is reduced at the initial stage of a short circuit.
申请公布号 JPH11150939(A) 申请公布日期 1999.06.02
申请号 JP19970319242 申请日期 1997.11.20
申请人 FUJI ELECTRIC CO LTD 发明人 ABE YASUSHI;SASAGAWA KIYOAKI
分类号 H02M1/00;H02M1/08;H02M7/48;H02M7/483;H02M7/537 主分类号 H02M1/00
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