| 摘要 |
<p>PROBLEM TO BE SOLVED: To constitute a semiconductor storage with a memory array which is divided into memory blocks, without increase in the number of decoders. SOLUTION: A source diffused layer 36 and a drain diffused layer 38 are formed independently by each memory block, and one end of the source diffusion and the drain diffused layers 36 and 38 is connected to a potential supply line 46 via a PMOSFET 42. Also, the other is connected to a potential supply line 48 via an NMOSFET 44. A control gate 32 formed into a band shape on a floating gate 30 is connected to a common control gate line 50 formed independently for each memory block. Common band-shaped gate electrodes 42a and 44a are formed by a plurality of block selection transistors 42 and 44, respectively. The gate electrodes 42a and 42b and the control gate line 50 are connected to a common potential supply line 52.</p> |
