| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for forming a film of polysilmethylene on a substrate and a process for forming a pattern of polysilmethylene on a substrate. SOLUTION: The process for forming a film of polysilmethylene comprises forming a disilacyclobutane film on a substrate, forming thereon a metal particle layer comprising a metal selected from among gold, platinum, palladium, copper, and silver, and heating the disilacyclobutane film to a temp. lower than the m.p. of polysilmethylene obtd. from disilacyclobutane to cause the ring-opening polymn. of disilacyclobutane. The process for forming a pattern of polysilmethylene comprises forming a disilacyclobutane film on a substrate, forming thereon a metal particle layer comprising a metal selected from among gold, platinum, palladium, copper, and silver in a form of a pattern, heating the disilacyclobutane film to a temp. lower than the m. p. of polysilmethylene obtd. from disilacyclobutane to cause the ring-opening polymn. of disilacyclobutane, and removing a part of disilacyclobutane film whereon the metal pattern has not been formed. |
