| 摘要 |
PROBLEM TO BE SOLVED: To eliminate a problem that it is necessary to form a silicon carbide film on the surface of a sintered product, when an extremely smooth surface is required. SOLUTION: This silicon carbide sintered product which comprises a polycrystal and whose polished surface has a surface roughness of <= 3 nm as an average roughness on a central line by a contact type measuring method. The method for producing a silicon carbide sintered product comprises adding 0.1-0.8 wt.% of boron or its compound and 1-5 wt.% of carbon as sintering auxiliaries to silicon carbide powder having an average particle of <=0. 7 μm, molding the mixture, sintering the molded product in an inert gas atmosphere of 1900-2050 deg.C at the atmospheric pressure, subjecting the sintered product to a hot hydrostatic pressure press (HIP) treatment at a lower temperature than the sintering temperature under a pressure of >=1000 kg/cm<2> , and subsequently polishing the surface of the obtained HIP treatment product with diamond abrasive particles having an average particle diameter of <=2 μm. |
