PROCESS FOR PRODUCING SILICON SINGLE CRYSTAL

摘要

A method of manufacturing a silicon single crystal with the MCZ method in which the single crystal is pulled while being rotated under the conditions where the crystal growth rate v1 (mm min) and the crystal circumference velocity v2 (mm/min) satisfy the following relationships: $$ $ and$ By\; the\; method,\; it\; is\; possible\; to\; manufacture\; a\; silicon\; single\; crystal\; with\; a\; large\; diameter\; with\; the\; MCZ\; method\; without\; causing\; distortion.\mathop{\mathrm{image}}$$$$