| 摘要 |
PROBLEM TO BE SOLVED: To provide both a method for growing a crystal by which a crystal layer with slight defects can be grown and a method for producing a semiconductor luminous element. SOLUTION: The first electroconductive type clad layer 3 composed of an n-type ZnMgSSe mixed crystal, the first guide layer 4 composed of a ZnSSe mixed crystal, an active layer 5 composed of a ZnCdSe mixed crystal, the second guide layer 6 composed of the ZnSSe mixed crystal and the second electroconductive type clad layer 7 composed of a p-type ZnMgSSe mixed crystal are successively grown on a substrate 1. At this time, the growth face is grown in a state in which both the face of a group II element and the face of a group VI element are present. For example, the growth face is grown in a state in which both c(2×2) and (2×1) are recognized by an observation of reflection high energy electron diffraction(RHEED). Specifically, e.g. the intensity ratio of respective particle beams of zinc and selenium is regulated to 5 selenium relatively to 5-7 zinc expressed in terms of the quantity of the particle beams reaching the growth face. Thereby, a crystal layer free of defects can be grown. |
