| 摘要 |
PURPOSE:To provide a manufacturing method of a semiconductor device wherein the deterioration of the refresh time of a dynamic random access memory can be prevented regarding the improvement of the manufacturing method of the semiconductor device wherein the deterioration of the refresh time is prevented. CONSTITUTION:The manufacture is constituted so as to include a process wherein impurities having a concentration which can stabilize the refresh time are implanted into the surface of a semiconductor substrate 1 inside a contact hole 6a made in a silicon oxide film 6 formed on the surface of the semiconductor substrate 1. |
