发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT, PRODUCTION OF THE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND INDICATOR THEREOF
摘要 PROBLEM TO BE SOLVED: To effectively pick up light emitted from a light-emitting layer by providing a conductive layer between a pair of electrode leads and a P electrode, in such a manner as to connect to a P electrode a pair of electrode leads which are provided with a recessed part for a semiconductor chip whose surface which is a reflecting face of light-emitting from a light-emitting layer and are insulated/divided. SOLUTION: A recessed part 5 for a semiconductor chip is provided to a pair of electrode lead consisting of a P-electrode 1 and an N-electrode lead 2. For example, a semiconductor chip 3 which is provided with a light emitting layer formed by a P-N junction of P-type semiconductor layer made of a GaN and an N-type semiconductor layer is fitted to the recessed part. The P-type semiconductor layer is connected to the P electrode lead 1, while the N-type semiconductor layer is connected to the N-electrode lead 2. The joint part between the semiconductor chip 3 and the P-type electrode lead 1 and N electrode 2 is formed of visible optically transmissive epoxy resin, etc., and it is encapsulated with an encapsulating resin 4 which functions as a lens. A light emitted from the light-emitting layer is reflected on the surface of the recessed part, and it can be extracted effectively, because no wire bonding or thin film electrode blocking the light is provided.
申请公布号 JPH11150295(A) 申请公布日期 1999.06.02
申请号 JP19970315579 申请日期 1997.11.17
申请人 SONY CORP 发明人 NATORI TAKEHISA;TSURUTA KOUYA
分类号 H01L33/10;H01L33/32;H01L33/38;H01L33/54;H01L33/56;H01L33/60;H01L33/62;H01S5/00;H01S5/323 主分类号 H01L33/10
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