Process for forming thin film metal oxide materials having improved electrical properties

摘要

A process is provided for preparing mixed metal oxide materials having improved leakage characteristics when formed into a capacitor. The process comprises: (a) preparing a solution of a liquid precursor of the mixed metal oxide materials having a given composition in a water-immiscible solvent; (b) adding a small amount of water to the solution to form a two-phase mixture; (c) refluxing the two-phase mixture for a period of time; and (d) removing the water. Optionally, an additional amount of the water-immiscible solvent may be added prior to removing the water. In this case, both the added amount of the water-immiscible solvent and the water are removed simultaneously. The treated metal organic acid salt solutions provide ceramic thin films having improved leakage characteristics as compared to the prior art thin films prepared from untreated prior art solutions.