| 摘要 |
<p>An improved method of fabricating a phase shifting mask suitable for semiconductor manufacture includes the steps of identifying phase conflict areas in a desired mask pattern and forming phase shift bands in the phase conflict areas. Phase conflict areas occur in transparent areas of the mask pattern which are in close proximity to one another and which have the same phase. More specifically, the method of the invention includes the steps of: depositing an opaque layer (i.e., chrome) on a transparent substrate, etching openings in the opaque layer to form a pattern of transparent areas and opaque areas, connecting adjacent transparent areas together in the phase conflict areas, and forming phase shift areas in every other transparent area and in the connecting areas.</p> |
