发明名称 |
Method and apparatus for depositing a planarized passivation layer |
摘要 |
A planarized passivation layer is described. A planarized passivation layer of the present invention preferably includes a fluorosilicate glass (FSG) layer and a silicon nitride layer. The FSG layer is preferably deposited using triethoxyfluorosilane (TEFS) and tetraethoxyorthosilicate (TEOS). The inclusion of fluorine in the process chemistry provides good gap-fill characteristics in the film thus formed. The TEFS-based process employed by the present invention employs a low deposition rate, on the order of less than about 4500 ANGSTROM /min, and preferably above 3000 ANGSTROM /min, when depositing the FSG layer. The use of low deposition rate results in a positively sloped profile, preventing the formation of voids during the deposition of the FSG layer and the silicon nitride layer.
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申请公布号 |
US5908672(A) |
申请公布日期 |
1999.06.01 |
申请号 |
US19970950923 |
申请日期 |
1997.10.15 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
RYU, CHOON KUN;HUANG, JUDY H.;CHEUNG, DAVID |
分类号 |
C23C16/34;C23C16/40;H01L21/3105;H01L21/316;(IPC1-7):C23C16/40 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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