发明名称 |
Vacuum-sealed field-emission electron source and method of manufacturing the same |
摘要 |
A recess portion in a bowl-like shape is formed at the center of a silicon substrate, and plural cathodes are formed in a matrix with a predetermined distance therebetween on the bottom of the recess portion. Around each cathode on the silicon substrate, a withdrawn electrode is formed with an insulating film disposed therebelow. A first wire layer connected with the withdrawn electrode at one end extends along a slant side face of the recess portion and on the top face of a protrusion portion. A sealing cover in the shape of a flat plate of a transparent glass plate or the like is integrated with the silicon substrate with a circular sealing material disposed therebetween. A space formed among the silicon substrate, the circular sealing material and the sealing cover is retained to be vacuated.
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申请公布号 |
US5909033(A) |
申请公布日期 |
1999.06.01 |
申请号 |
US19970967020 |
申请日期 |
1997.11.10 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KOGA, KEISUKE;MORITA, KIYOYUKI |
分类号 |
H01J9/02;H01J1/304;H01J3/02;H01J29/04;H01J31/12;(IPC1-7):H01L29/06 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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