发明名称 Vacuum-sealed field-emission electron source and method of manufacturing the same
摘要 A recess portion in a bowl-like shape is formed at the center of a silicon substrate, and plural cathodes are formed in a matrix with a predetermined distance therebetween on the bottom of the recess portion. Around each cathode on the silicon substrate, a withdrawn electrode is formed with an insulating film disposed therebelow. A first wire layer connected with the withdrawn electrode at one end extends along a slant side face of the recess portion and on the top face of a protrusion portion. A sealing cover in the shape of a flat plate of a transparent glass plate or the like is integrated with the silicon substrate with a circular sealing material disposed therebetween. A space formed among the silicon substrate, the circular sealing material and the sealing cover is retained to be vacuated.
申请公布号 US5909033(A) 申请公布日期 1999.06.01
申请号 US19970967020 申请日期 1997.11.10
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KOGA, KEISUKE;MORITA, KIYOYUKI
分类号 H01J9/02;H01J1/304;H01J3/02;H01J29/04;H01J31/12;(IPC1-7):H01L29/06 主分类号 H01J9/02
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