发明名称 Cladding of an interconnect for improved electromigration performance
摘要 According to one embodiment, a method for encapsulating a conductive structure having a first layer, a second layer and a third layer, with a cladding layer, for improved electromigration performance is described. The method comprises the following steps: forming a fourth layer over the conductive structure and reacting at least a portion of the first layer, the third layer and the fourth layer with a portion of the second layer to form a cladding layer that encapsulates an unreacted portion of the second layer. In one embodiment of the present invention, the cladding layer is TiAl3.
申请公布号 US5909635(A) 申请公布日期 1999.06.01
申请号 US19960673277 申请日期 1996.06.28
申请人 INTEL CORPORATION 发明人 MARIEB, THOMAS;GARDNER, DONALD;VU, QUAT
分类号 H01L21/768;H01L23/532;(IPC1-7):H01L21/441 主分类号 H01L21/768
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