| 摘要 |
A circuit for controlling the threshold voltage in a semiconductor device. The circuit includes a substrate bias sensing block, and oscillater, a charge pump and a current supplying transistor. The substrate bias sensing block prevents substrate bias from decreasing below a predetermined value and includes a voltage divider including a plurality of PMOS transistors coupled in series between a power supply and the substrate bias, wherein each first junction of each transistor is connected with the substrate and each second junction with each gate. The block includes a latch being applied by the voltage of the first junction of one of the PMOS transistors and the inverted voltage of the corresponding second junction. A very low subthreshold leakage current can be obtained by maintaining a high threshold voltage in the standby mode, and low power consumption and high speed operation can be accomplished by lowering the threshold voltage with the low supplied power in the operation mode.
|
