| 摘要 |
A MOSFET integrated circuit device has a main MOSFET, a mirror MOSFET, a current sensing resistor, a reference voltage source, a comparator for detecting an overcurrent condition by comparing a potential at the source of the mirror MOSFET with a reference potential of the reference voltage source, and a control circuit section for turning off the main MOSFET in case of the overcurrent condition. The device further comprises a group of pads allowing a test of the overcurrent detecting function by application of a test current much lower than an overcurrent. The pad group comprises a first pad for measuring the potential at the source of the mirror MOSFET, a second pad for measuring the reference potential and a third pad for detecting a change in the output of the comparator.
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