| 摘要 |
This invention pertains to monolithic filters of the band-pass or band-reject type which a single crystal ferroelectric material having an electric field dependent permittivity. The filters are comprised of: a first layer of a single crystal dielectric material; a second layer of a single crystal high Tc superconductor material; a third layer of a single crystal ferroelectric material; and a fourth layer of high Tc superconductive microstrip lines configured into the various filter circuits, including resonator circuits and transformer circuits. The filters are capable of operating at power levels up to 0.5 MW at a temperature slightly above the Curie temperature to avoid hysteresis.
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