| 摘要 |
A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al1-x-yGaxInyN (0</=x</=1, 0</=y</=1, x+y</=1) layers laminated above the nucleus formation buffer layer. The nucleus formation buffer layer is formed of Al1-s-tGasIntN (0</=s</=1, 0</=t</=1, s+t</=1) and formed on a surface of the substrate with an average film thickness of 5 nm to 20 nm such that the nucleus formation buffer layer has a number of pinholes for control of polarity and formation of nuclei. The pinholes are formed among loosely formed small crystals of Al1-s-tGasIntN (0</=s</=1, 0</=t</=1, s+t</=1).
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