| 发明名称 |
Cleaning and stripping of photoresist from surfaces of semiconductor wafers |
| 摘要 |
In a microwave downstream process, a microwave plasma is formed from a gas that has a small quantity of fluorine to enhance ashing without substantial oxide loss. This process can be performed before or after other microwave downstream processes or reactive ion etching processes.
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| 申请公布号 |
US5908319(A) |
申请公布日期 |
1999.06.01 |
| 申请号 |
US19960637137 |
申请日期 |
1996.04.24 |
| 申请人 |
ULVAC TECHNOLOGIES, INC. |
发明人 |
XU, HAN;BERSIN, RICHARD L. |
| 分类号 |
G03F7/42;H01L21/027;H01L21/302;H01L21/3065;H01L21/311;(IPC1-7):H01L21/302 |
主分类号 |
G03F7/42 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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