| 摘要 |
PROBLEM TO BE SOLVED: To perform high speed photoelectric conversion by a method, wherein a waveguide layer is formed by a non-impurity added semiconductor layer, and a three-terminal element is formed thereon. SOLUTION: A non-doped AlInAs waveguide layer 3 is formed on an InP substrate 1 with the InP buffer layer 2, and a high electron mobility transistor(HEMT) 10 is formed on the waveguide 3. A core layer 32 is formed by extending a part of the waveguide layer 3, in width which is sufficiently wider than the gate length of the HEMT 10, from the part under the gate of the HEMT 10 to the substrate 1, a clad layer of SiO2 or Si3 N4 is provided on the circumference of the core layer 32, and an optical waveguide 30 is formed. Furthermore, the HEMT 10 is provided with an active layer 14, a spacer layer 15 and an electron feeding layer 16. Accordingly, since an optical signal is directly inputted to the active layer 14, which is the functional layer to accomplish the operation of the HEMT 10, from the waveguide layer 3, high speed photoelectric conversion can be accomplished. |
