| 摘要 |
PROBLEM TO BE SOLVED: To obtain an electron beam resist responsive to electron beams, superior in dry etching resistance, resolution and sensitivity, capable of forming a thin film by the spin coating method on a substrate and high in aptitude to micro-fabrication in a nanometer order by using a metanofullerene obtained by chemical modification of fullerene for the electron beam resist. SOLUTION: The metanofullerene obtained by chemically modifying the fulerene, preferably, the one having an organic group containing an oxygen atom on the side chain is used for the electron beam resist. The metanofullerene is prepared by cross-linking a carbon atom with the network of 6-membered and 5-membered carbon atom rings for forming the fullerene represented by the formula and adding the side chains R<1> and R<2> to this carbon atom. In the formula, each of R<1> and R<2> is, independently, an organic group and each may combine with each other to form a ring and with the other carbon atom of the fullerene. |
