| 摘要 |
PROBLEM TO BE SOLVED: To prevent a simultaneous progress of protection group elimination reaction and swelling, at the time of forming a chemically amplified resist pattern on a substrate, by eliminating the protection group of the developed chemically amplified resist and then heat-treating the resist. SOLUTION: On a semiconductor substrate 1 whereupon an oxide film is formed, a chemically amplified resist 3 is applied and the substrate is exposed by excimer exposure equipment by using a mask. Then, for example, after heating the exposed substrate at 110 deg.C for 90 sec., it is developed and a resist pattern is formed. The pattern width at that time is expressed by W1. Then, to have protection group elimination reaction while heating the substrate, the substrate is, for example, impregnated with 90 deg.C sulfonic acid solution 5. Then, the resist pattern is swelled by heating it, for example at 180 deg.C for 120 sec. by using a hot plate 6. As a result, the resist pattern width becomes W12, and a reduced pattern, for example, by approximately 0.1μm compared with that prior to the swelling, is obtained. |
