发明名称 PLASMA CHAMBER
摘要 PROBLEM TO BE SOLVED: To give plasma resistance to corrosive gas, without the inner face of a chamber being roughened, even if a worker performs plasma cleaning, using nitrogen trifluoride as cleaning gas, by applying immobilization treatment to the inner surface of a plasma chamber. SOLUTION: An immobilization film is made in the thickness of about 100Åat the inner wall face of a plasma chamber by charging the plasma chamber made of SUS 316L arranged in a semiconductor manufacture device, and leaving it for about 48 hours. For ozone gas in high concentration, the one where the ozone gas is condensed to the concentration of about 60-100 vol.% by passing the oxygen gas lead out of an oxygen supply source 1 such a liquid oxygen gas, etc., through an ozone generator 2 thereby producing ozone gas of 5-10 vol.% and supplying ozone gas produced in an ozone condenser 3 using an absorbent such as silica gel or the like to it is used.
申请公布号 JPH11145064(A) 申请公布日期 1999.05.28
申请号 JP19970322368 申请日期 1997.11.07
申请人 IWATANI INTERNATL CORP 发明人 KOIKE KUNIHIKO;INOUE GOICHI;FUKUDA TATSUO
分类号 C01B13/10;C23C14/00;C23C14/56;C23C16/50;H01L21/205;H01L21/31;(IPC1-7):H01L21/205 主分类号 C01B13/10
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