SEMICONDUCTOR AND MANUFACTURE OF THE SAME

摘要

PROBLEM TO BE SOLVED: To prevent cracking of a BLM film interposed between a solder ball which is the outside connecting terminal of a device chip and an electrode pad. SOLUTION: An atomic mixed layer layer AM of Cr atoms with Cu atoms is provided on a boundary between a Cr film 5 for ensuring adhesion to an electrode pad 2 and a Cu film 6, for ensuring adhesion to the constituting element of a solder ball 9b among a variety of metal layers constituting a BLM film 8w. The atomic mixed layer AM is formed by irradiating the Cr film 5, and the Cu film 6 with inactive ion such as Ar<+> in a stage in which at least one part of the Cu film 6 is formed on the Cr film 5. Even if alloying reaction inside the BLM film 8w is advanced in a heating process such as wet back, aging, and temperature cycle test for forming the soeder ball 9b, and Pb deposit 10 whose base adhesion is weak reaches immediately above the Cr film 5, cracking in the Cr/Pb boundary can be prevented by the strong adhesion of the atomic mixed layer AM.