| 摘要 |
PROBLEM TO BE SOLVED: To realize a high film forming rate of a crystalline Si type photoelectric conversion layer through low-temp. plasma CVD method by the plasma CVD method for depositing it at specified base layer temp. flow rate of H gas with respect to a saline gas, specified pressure in the plasma reactor chamber, and specified film forming rate. SOLUTION: A crystalline Si type photoelectric conversion layer 25 is formed by the parallel flat plate type RF plasma CVD method at a film forming temp. of 550 deg.C or less at which is low-cost substrate is usable. The pressure in the plasma CVD reactor chamber is 3 Torr or higher, pref. 5 Torr or higher for the deposition. A gas to be fed in this chamber includes a saline baged gas and H gas, and the flow rate of the H gas is over 50 times the flow rate of the silane gas. In such a forming condition of the photoelectric conversion layer 25, its film forming rate is set at 16 nm/min or more in the thickness direction. |
