发明名称 ASHING METHOD
摘要 PROBLEM TO BE SOLVED: To completely remove a side film while preventing corrosion. SOLUTION: There is provided with an ashing method wherein a resist pattern 4 is ashed after an aluminum film has been etched with a chlorine based gas, being masked by the resist pattern 4, in accordance with an aluminum wiring forming method. In the method, the surface portion of the resist pattern 4 is ashed half with an ashing gas in which a Freon based gas is added to oxygen. Subsequently, the resultant is subjected to corrosion protection rinsing using a weak acid solution. Thereafter, the remaining portion of the resist pattern 4 is fully ashed by using an ashing gas without containing a Freon based gas. Then, a side film 6 is removed by the weak acid solution. Thus, since the attachment of chloride 7 formed through etching is removed by half ashing and corrosion protection rising, a substrate 3 is not corroded by the chloride 7. Without forcibly raising the full ashing efficiency, the side film 6 can be completely removed through an exclusive removal rinsing.
申请公布号 JPH11145123(A) 申请公布日期 1999.05.28
申请号 JP19970329565 申请日期 1997.11.13
申请人 HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD 发明人 IGUCHI HIDESATO;SHIMODA MASAKI;SENKAWARA TADASHI
分类号 G03F7/42;H01L21/027;H01L21/302;H01L21/3065;H01L21/3205;(IPC1-7):H01L21/306 主分类号 G03F7/42
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