| 摘要 |
PROBLEM TO BE SOLVED: To improve light deflectivity at an end surface by improving flatness at a surface of the resonator end face of a laser diode. SOLUTION: On a substrate 1, a plurality of layers 2-9 of 3-nitride semiconductor are formed. An active layer 6 of MQW(multiple quantum well) structure is sandwiched between an n-guide layer 6 and an n-clad layer 4 on one side and a p-guide layer 7 and a p-clad layer 8 on the other side. By removing the other part except for a resonator part by etching, the resonator is formed into a mesa-type. The mesa-type etching of the resonator is so executed that width which is parallel to a substrate surface at the end surface of the resonator is wider than that of the main body part of the resonator, where a current flows vertical to the substrate surface, so that the resonator becomes I-shaped. When the resonator is to be retained by mesa-etching, an edge part of the end surface is etched round, which does not appear at a center part of the end surface. Thus, the flatness at the end surface where light is reflected is substantially improved. |
