| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a simulation method of a pile-up phenomenon, which can simulate the phenomenon where phosphorous and arsenic are piled up on a silicon-oxide film boundary, without using an intermediate material layer in the diflusion simulation of phosphorus and arsenic. SOLUTION: An intermediate material layer is eliminated by placing a double mesh point I on the Si-SiO2 film boundary, arranging a mesh point O1 on an SiO2 film-side at an interval within 5A from the boundary and piling up phosphorus and arsenic on the mesh point of the SiOx film-side in the double mesh points I. Only the relation of Si and SiO2 films is processed in the deposition of the SiO2 film on Si, the etching of the SiO2 film on Si and the process simulation of the thermal oxidation of Si, and a processing can be simplified. Then, a simulation result can be transferred to a device simulator as it is.</p> |
