发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce wiring inductance and stabilize characteristics of a semiconductor device by electrically connecting the other region of one conducting layer and an outer terminal, and by using the other conducting layer positioned as the lower layer of the one conducting layer. SOLUTION: A semiconductor element 101 is fixed on, e.g. a metallic layer 103a of the uppermost part of a retaining member having two or more conducting layers (metallic layers 103a, 103b, 103c) which are insulated via insulating region layers 102. A wire 105, i.e., a gate of the semiconductor element 101 can be electrically connected with a terminal 109 for external signal input by connecting an arbitrary location of the metallic layer 103c and the terminal 109 for external signal input. For this reason, a leading-out portion of the terminal 109 for external signal input on the retaining member can be arranged on an arbitrary portion, which is different from a connecting part of the wire 105 in the metallic layer 103a. Thereby the wiring length of the terminal for external signal input can be reduced, and inductance of the terminal for external signal input can be reduced.
申请公布号 JPH11145376(A) 申请公布日期 1999.05.28
申请号 JP19970301575 申请日期 1997.11.04
申请人 HITACHI LTD 发明人 KAWASE DAISUKE;KAMIDA YUKIO;SHIGEMURA TATSUYA
分类号 H01L25/07;H01L25/18;(IPC1-7):H01L25/07 主分类号 H01L25/07
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