发明名称 METHOD FOR FORMING WIRING ALUMINUM FILM
摘要 PROBLEM TO BE SOLVED: To completely bury an aluminum film in the contact hole and the through hole of a high aspect ratio, which are formed on an interlayer insulating film without a void. SOLUTION: A core forming layer 14 having a core forming operation on the gas phase chemical growth of aluminum is formed on the surface of an insulating film 12 containing the inner part of a contact hole 13. Then, an aluminum film 15 having film thickness thinner than the minimum radius in the radii of the contact hole 13 is formed on the surface of the insulating film 12, containing the inner wall of the contact hole 13 with gas phase chemical growth. Then, heat treatment is executed before the surface of the aluminum film 15 is coated with a natural oxide film and aluminum is re-flowed. Thus, the aluminum film 15 is completely buried in the contact hole 13.
申请公布号 JPH11145143(A) 申请公布日期 1999.05.28
申请号 JP19970321957 申请日期 1997.11.10
申请人 NEC CORP 发明人 SUGAI KAZUMI
分类号 C23C16/06;C23C16/00;C23C16/20;C23C16/56;H01L21/28;H01L21/283;H01L21/285;H01L21/3205;H01L21/4763;H01L21/768;H01L23/52;(IPC1-7):H01L21/320 主分类号 C23C16/06
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