发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To provide a capacitor, capable of avoiding quality deterioration in a capacitor insulating film by hydrogen, even if an insulating film made of a metallic oxide is used as a capacitor insulating film. SOLUTION: In a capacitor composed of a lower part capacitor electrode 116 made of Ru, a capacitor insulating film 117 made of (Ba, Sr) TiO3 provided on this lower part electrode 116 as well as an upper part capacitor 118 made of Ru provided on this capacitor insulating film 117, a TINx film 119 as a hydrogen permeation preventing film is provided on the upper part capacitor electrode 118.
申请公布号 JPH11145410(A) 申请公布日期 1999.05.28
申请号 JP19970312410 申请日期 1997.11.13
申请人 TOSHIBA CORP 发明人 IMAI KEITAROU;ARIKADO TSUNETOSHI;SUGURO KYOICHI
分类号 H01L27/10;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108 主分类号 H01L27/10
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