| 摘要 |
PROBLEM TO BE SOLVED: To eliminate deviations in composition from a double-hetero structure so as to enable a semiconductor device to be lessened in threshold and improved in efficiency by a method, wherein a thin n-AlGaAs current blocking layer is provided between a P-AlGaInP clad layer and an n-AlInP current blocking layer in a double heterostructure except the upper stripe-like mesa. SOLUTION: An AlGaInP visible light semiconductor laser has a structure, where an n-GaAs buffer layer 2 is formed on an n-GaAs substrate 1. A double heterostructure composed of an n-AlGaInP clad layer 3, an active layer 4 of multiple quantum well structure of GaInP and AlGaInP, and a p-AlGaInP lower clad layer, 5 is provided thereon. Furthermore, an etching stop layer 6, a p- AlGaInP upper clad layer 17, a p-GaInP layer 8, an n-AlGaAs current block layer 9, an n-AlInP current block layer 10, and a p-GaAs contact layer 11 are formed. Therefore, a current is constricted by the current block layers 9 and 10, and a lateral mode is controlled by the actual refractive index distribution of the current blocking layer 10. |
