发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory device which assures high speed access of stored data in the diagonal line direction when the data format of secondary dimension is stored. SOLUTION: A memory area is divided into four memory arrays 15-1 to 15-4 and shifters 13-1 to 13-4 for shifting the page address by one address are also provided in each memory array. Image data is divided into sub-blocks of 4×4. Thereby, vertical four data are stored in the same memory array in such a manner that the page address of sub-blocks connected in the horizontal direction becomes continuous. When access is made to the data in the diagonal line direction and a unit of data consisting of four data is laid over the adjacent sub-blocks, the page address is shifted by the shifter in regard to the memory array including the line of such sub-blocks. Thereby, four data can always be obtained for only one page access even in the access in the diagonal line direction and the data can be scanned in the diagonal line direction even in the page mode.
申请公布号 JPH11144451(A) 申请公布日期 1999.05.28
申请号 JP19970302842 申请日期 1997.11.05
申请人 TEXAS INSTR JAPAN LTD 发明人 HASHIMOTO SEIJI
分类号 G11C11/401;G06F12/06;G11C8/12;G11C11/407;(IPC1-7):G11C8/00 主分类号 G11C11/401
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