| 摘要 |
PROBLEM TO BE SOLVED: To provide an integrated semiconductor device which is extremely high in security whose analysis of the circuit structure is extremely hard in a small area capable of being manufactured at low cost. SOLUTION: In an integrated semiconductor device, an electric capacity element 12 is formed on an upper part layer located at distant from a silicon substrate 1 through the intermediary of electric insulating layers 9', 10, so as to cover most of respective electric circuit elements (respectively MOS transistors 2 and a diode element 3) with the major parts of conductor layer 6, 16 (made of alumina thin films similar to the other conductor layers 4, 5), while the electric insulating layer 9' is planarized with any one material from among of an insulating resin, SiOx , SiNx and SiOx Ny . On the other hand, an electric insulation protective layer 11 above the conductor layer 16 is formed as a uppermost layer. Furthermore, the electric insulation layer 10 below the conductor layer 16 (formed of SiO2 thin film similar to the other electric insulating layers 7, 8) is also planarized. |
