| 摘要 |
PROBLEM TO BE SOLVED: To prevent the breakage of a photomask produced using a low hardness material such as fluorite in the conveyance or scanning exposure of the photomask. SOLUTION: In a reticle R using fluorite (calcium fluoride (CaF2 )) as the material of the substrate, protective films 42A-42D of chromium(Cr), chromium oxide(CrO) or silicon oxide(SiO2 or SiO) are formed in regions other than the pattern region 40 and coming in contact with other member in the conveyance or exposure of the reticle R. |
