| 摘要 |
<p>A semiconductor comprising a buried conducting layer (108), such as a buried collector, comprises a trench, the walls of which are covered with a layer (109') of a material in which dopant ions diffuse faster than in monocrystalline silicon. A contact area is doped in close proximity to the trench wall (109'). The dopants will diffuse through the layer (109') and form a low resistance connection to the buried layer (108). The layer (109') may comprise polysilicon or porous silicon, or a silicide. If the material used in the layer (109') is not in itself conducting, the size of the component may be significantly reduced.</p> |
