| 摘要 |
<p>An apparatus (30) for depositing an electrical conductive layer on the surface of a wafer (38) includes a virtual anode (10) located between the actual anode (62) and the wafer (38). The virtual anode (10) modifies the electric current flux and plating solution flow between the actual anode (62) and the wafer (38) to thereby modify the thickness profile of the deposited electrically conductive layer on the wafer (38). The virtual anode (10) can have openings through which the electrical current flux passes. By selectively varying the radius, length or both, of the openings, any desired thickness profile of the deposited electrically conductive layer on the wafer (38) can be readily obtained.</p> |
