EPITAXIAL GROWTH FURNACE

摘要

An epitaxial growth furnace comprising first and second partition walls provided in a reaction chamber, a first independent space enclosed with the partition walls and an inner surface of the reaction chamber, a second independent chamber partitioned by the partition walls so that the second independent space is isolated from the inner surface of the reaction chamber, a retaining mechanism adapted to retain a pair of semiconductor wafers on the first and second partition walls so that the wafers are opposed to each other with the surfaces thereof spaced from each other and are exposed to the second independent space, and a pair of heaters for applying radiant heat to the rear surfaces of the two semiconductor wafers.