发明名称 Oriented polycrystalline thin films of transition metal chalcogenides
摘要 A method of preparing a polycrystalline thin film or nested polyhedra of circular or nanotubular cross-section of a transition metal chalcogenide which includes (a) depositing a layer of a transition metal material or mixtures thereof on the substrate; and (b) heating the layer in a gaseous atmosphere containing one or more chalcogen materials for a time sufficient to allow the transition metal material and the chalcogen material to react and form the oriented polycrystalline thin film. <IMAGE>
申请公布号 EP0580019(B1) 申请公布日期 1999.05.26
申请号 EP19930110852 申请日期 1993.07.07
申请人 YEDA RESEARCH AND DEVELOPMENT COMPANY, LTD. 发明人 TENNE, RESHEF;HODES, GARY;MARGULIS,LEV
分类号 C23C14/24;C23C8/02;C23C14/06;C23C14/14;C23C14/34;C23C14/58;C23C18/00;C30B7/12;C30B19/00;C30B23/02;C30B25/02;C30B29/48;C30B29/66 主分类号 C23C14/24
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