发明名称 |
Oriented polycrystalline thin films of transition metal chalcogenides |
摘要 |
A method of preparing a polycrystalline thin film or nested polyhedra of circular or nanotubular cross-section of a transition metal chalcogenide which includes (a) depositing a layer of a transition metal material or mixtures thereof on the substrate; and (b) heating the layer in a gaseous atmosphere containing one or more chalcogen materials for a time sufficient to allow the transition metal material and the chalcogen material to react and form the oriented polycrystalline thin film. <IMAGE> |
申请公布号 |
EP0580019(B1) |
申请公布日期 |
1999.05.26 |
申请号 |
EP19930110852 |
申请日期 |
1993.07.07 |
申请人 |
YEDA RESEARCH AND DEVELOPMENT COMPANY, LTD. |
发明人 |
TENNE, RESHEF;HODES, GARY;MARGULIS,LEV |
分类号 |
C23C14/24;C23C8/02;C23C14/06;C23C14/14;C23C14/34;C23C14/58;C23C18/00;C30B7/12;C30B19/00;C30B23/02;C30B25/02;C30B29/48;C30B29/66 |
主分类号 |
C23C14/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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