| 摘要 |
A high-power LED lamp uses an LED chip 2 that can be larger than 1mm square. The chip 2 has trenches 14 formed in semiconductor material 8 that can convert light trapped in the semiconductor material into light 28, 31t that passes through a major surface of the chip. The trenches 14 include light-reflecting tracks 16 joined to a chip terminal 11 and feeding a semiconductor layer. Tracks 19 feed another semiconductor layer. By ensuring that the refractive index of the semiconductor material 8 is at least 20% greater than the refractive index of the translucent substrate 5 of the chip and greater than the refractive indices of transparent dielectric material filling the trenches and transparent cover material 4, the semiconductor material acts as a light guide core. The chip can have triangular light emitting elements that improve light extraction from the semiconductor in comparison with the rectangular elements E1-E9 of fig.2. The elements can be provided with fuses 71, resulting in improved manufacture yield of chips. A 25 watt single chip lamp with a heat sink very close to the active region is also described. |
