| 发明名称 |
Method and apparatus for depositing a planarized dielectric layer on a semiconductor substrate |
| 摘要 |
<p>This invention relates to methods and apparatus for treating a semiconductor substrate. The method principally includes treating the substrate by forming on the substrate a liquid short-chain polymer of the general formula R a Si (OH) b or R a SiH b (OH) c where a + b = 4 ou a + b + c = 4 respectively; a, b and c are integers, Ri is a carbon-containing group and Si-C bonding is inferred.</p> |
| 申请公布号 |
GB2331626(A) |
申请公布日期 |
1999.05.26 |
| 申请号 |
GB19990003626 |
申请日期 |
1997.08.21 |
| 申请人 |
* TRIKON EQUIPMENTS LIMITED |
发明人 |
KNUT * BEEKMAN;ADRIAN * KIERMASZ;SIMON * MCCLATCHIE;MARK PHILIP * TAYLOR;PETER LESLIE * TIMMS |
| 分类号 |
H01L21/31;H01L21/312;H01L21/316;H01L21/768;(IPC1-7):H01L21/312 |
主分类号 |
H01L21/31 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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