| 摘要 |
A linear magnetron cathode is disclosed which may be used as a vapor or plasma source for coating deposition or ion processing. The cathode has the shape of an elongated rectangular bar with vaporization of material occurring from an evaporable surface wrapping around the periphery of the bar, along two opposite sides and around both ends. A magnetic field is established over the entire evaporable surface which has a component parallel to the surface and perpendicular to the long direction of the cathode, forming a closed-loop magnetic tunnel around the periphery which directs an arc or sputtering plasma discharge. The cathode may be configured for either sputtering or cathodic arc evaporation by choice of magnetic field strength and lateral confinement means. The invention provides uniform cathode erosion and a vaporized material stream in two directions over an extended length, permitting uniform deposition or implantation over large areas. Substrate mounting and movement geometries are disclosed which allow efficient use of the bi-directional vapor emission distribution.
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