发明名称 Magnetron for low pressure full face erosion
摘要 A method for controlling the operation of a magnetron source for sputtering a surface of a target in a vacuum chamber, the method including the steps of: during a low pressure phase of sputtering, causing a magnetic field generated by a the magnetron source to be confined primarily to an inner region of the surface of the target so as to reduce leakage of electrons away from the target during sputtering; and during a subseguent high pressure phase of sputtering, causing the magnetic field generated by the magnet assembly to extend into the outer region of the surface of the target so as to sputter material from the outer region of the surface of the target. The pressure of the high pressure phase of sputtering is higher than the pressure of the low pressure phase of sputtering.
申请公布号 US5907220(A) 申请公布日期 1999.05.25
申请号 US19960615771 申请日期 1996.03.13
申请人 APPLIED MATERIALS, INC. 发明人 TEPMAN, AVI;GOGH, JAMES VAN
分类号 C23C14/35;C23C14/56;H01J37/34;H01L21/203;H01L21/285;(IPC1-7):C23C14/34 主分类号 C23C14/35
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