发明名称 |
Single deposition layer metal dynamic random access memory |
摘要 |
A 16 megabit (224) or greater density single deposition layer metal Dynamic Random Access Memory (DRAM) part is described which allows for a die that fits within an industry-standard 300 ml wide SOJ (Small Outline J-wing) package or a TSOP (Thin, Small Outline Package) with little or no speed loss over previous double metal deposition layered 16 megabit DRAM designs. This is accomplished using a die architecture which allows for a single metal layer signal path, together with the novel use of a lead frame to remove a substantial portion of the power busing from the die, allowing for a smaller, speed-optimized DRAM. The use of a single deposition layer metal results in lower production costs, and shorter production time.
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申请公布号 |
US5907166(A) |
申请公布日期 |
1999.05.25 |
申请号 |
US19970852905 |
申请日期 |
1997.05.08 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
CASPER, STEPHEN L.;ALLEN, TIMOTHY J.;DURCAN, D. MARK;SHIRLEY, BRIAN M.;RHODES, HOWARD E. |
分类号 |
G11C11/401;H01L23/50;H01L23/528;H01L27/10;(IPC1-7):H01L31/032;H01L31/033;H01L31/072 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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