| 摘要 |
A process for low pressure chemical vapour deposition of silicon nitride comprises contacting a substrate with ammonia and a silane of formula (t-C4H9NH)2SiH2 to deposit silicon nitride. Preferably the process is carried out at 500-800[deg]C at a pressure of 20 mTorr to 2 Torr with an ammonia:silane mole ratio of >2:1. |
