发明名称 |
Hot electron device and a resonant tunneling hot electron device |
摘要 |
The present invention is to solve the problems caused in various methods used to improve the performance of the device by improvement of conventional base layer. The present invention discloses a hot electron device which can improve the performance of the device such as the improvement in the current density and decrease in transition time by reducing the dispersion phenomenon by introducing indium arsenide layer having v-shape conduction band due to the graded composition as the base layer of hetero structure hot electron device (HET). In addition, the present invention discloses a resonant tunneling hot electron device which is constructed by adding an emitter electron projection layer to the hot electron device of the present invention so that the Fermi energy and alignment can occur due to the stark shift and the projection of hot electron to the base region can occur through the Fermi energy and alignment.
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申请公布号 |
US5907159(A) |
申请公布日期 |
1999.05.25 |
申请号 |
US19970963393 |
申请日期 |
1997.11.03 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
ROH, DONG WAN;KIM, GYUNG OCK |
分类号 |
H01L29/68;H01L29/76;(IPC1-7):H01L29/06 |
主分类号 |
H01L29/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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