发明名称 |
Composition and method for formation of silica thin films |
摘要 |
<p>The claimed invention pertains to a composition that forms silica thin films, wherein said composition performs well as a planarizing coating when applied to a substrate and is subsequently converted by exposure to high-energy radiation. The resultant silica thin films have excellent electrical insulating performance. Said composition comprises (A) a hydrogen silsesquioxane resin that contains at least 45 weight % of a hydrogen silsesquioxane resin with a molecular weight no greater than 1,500; and (B) solvent. A silica thin film is produced by evaporating the solvent (B), and then converting at least a portion of the hydrogen silsesquioxane resin (A) to silica by exposing coated substrate to high-energy radiation. The preferred substrate is a semiconductor substrate having at least one electrically conductive layer.</p> |
申请公布号 |
SG65053(A1) |
申请公布日期 |
1999.05.25 |
申请号 |
SG19980000386 |
申请日期 |
1998.02.21 |
申请人 |
DOW CORNING TORAY SILICONE COMPANY, LIMITED. |
发明人 |
KOBAYASHI AKIHIKO;MINE KATSUTISHI;NAKAMURA TAKASHI;SASAKI MOTOSHI;SAWA KIYOTAKA |
分类号 |
C08G77/12;C09D183/04;H01L21/316;(IPC1-7):C08G77/12;H01L21/312 |
主分类号 |
C08G77/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|